1SS355_0711 [BL Galaxy Electrical]
Silicon Epitaxial Planar Diode; 硅外延平面二极管型号: | 1SS355_0711 |
厂家: | BL Galaxy Electrical |
描述: | Silicon Epitaxial Planar Diode |
文件: | 总3页 (文件大小:188K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Diode
1SS355
FEATURES
Pb
z
Small Surface Mounting Type:
Lead-free
SOD-323
z
z
High Speed :t=1.2ns Typ.
High Reliability With High Surge Current Handing
Capability.
APPLICATIONS
SOD-323
z
High speed switching
ORDERING INFORMATION
Type No.
1SS355
Marking
A
Package Code
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
VRM
VR
Limits
90
Unit
V
Non-Repetitive Peak reverse voltage
DC Reverse Voltage
Peak forward Current
Average Rectified Output Current
Surge current (1s)
80
V
IFM
225
100
500
200
125
mA
mA
mA
mW
℃
IO
Isurge
PD
Power Dissipation
Junction temperature
Storage temperature
Tj
TSTG
-55~+125
℃
Document number: BL/SSSDB001
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Diode
1SS355
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Min. Typ. Max. Unit Conditions
Forward voltage
VF
IR
1.2
0.1
3
V
IF=100mA
Reverse current
μA
pF
VR=80V
Capacitance between
terminals
CT
VR=0.5V,f=1MHz
Reverse Recovery Time
trr
4
ns
IF=10mA,VR=6V,RL=100Ω
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSDB001
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Diode
1SS355
PACKAGE OUTLINE
Plastic surface mounted package
SOD-323
SOD-323
K
B
Dim
A
Min
Max
1.325
1.725
C
1.275
1.675
B
A
C
D
E
0.9 Typical
D
0.25
0.27
0.02
0.35
0.37
0.1
H
J
0.1 Typical
J
H
E
K
2.6
2.7
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
Shipping
1SS355
SOD-323
3000/Tape&Reel
Document number: BL/SSSDB001
Rev.A
www.galaxycn.com
3
相关型号:
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200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package High Speed Switching Diode
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